Fast recovery diode and manufacturing method thereof

The invention relates to a fast recovery diode and a manufacturing method thereof. The fast recovery diode comprises a substrate, a first epitaxial layer, a second epitaxial layer and a second doping part. The first epitaxial layer is arranged on one side of the substrate, and the first epitaxial la...

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Bibliographic Details
Main Author XIONG ZHIJUN
Format Patent
LanguageChinese
English
Published 26.03.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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