Encapsulated power amplifier device with air cavity over die

• Main Authors: SHILIMKA, VIKAS, KIM KEVIN, SCHULTZ JOSEPH GERARD
• Format: Patent
• Language: Chinese; English
• Published: 01.03.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A power amplifier device includes a substrate formed of a stack of alternating dielectric layers and patterned conductive layers and conductive vias electrically connecting the patterned conductive layers. The substrate has a set of substrate die contacts exposed at a first substrate surface, and an air cavity extending through a portion of the first substrate surface into the substrate between the set of substrate die contacts. A power transistor die has a first die contact and a second die contact at a first die surface connected to the substrate die contact. The power transistor die also includes an integrated transistor in an active region of the die. The integrated transistor includes a control terminal coupled to the first die contact, and a first conductive terminal coupled to the second die contact. The active region is aligned with the first gas cavity. 一种功率放大器装置包括基板，所述基板由交替的电介质层和图案化导电层的堆叠以及电连接所述图案化导电层的导电通孔形成。所述基板具有在第一基板表面处暴露的一组基板管芯接触件，以及穿过所述第一基板表面的一部分延伸到所述基板中的位于所述一组基板管芯接触件之间的气腔。功率晶体管管芯具有在第一管芯表面处的连接到