Substrate processing method

• Main Authors: LONG SONGNAN, KIM HOISAN, CUI SHENG, PARK JU-HYUK, KIM KYUNGNAM
• Format: Patent
• Language: Chinese; English
• Published: 06.02.2024
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A method of processing a substrate having a gap includes loading the substrate onto a substrate support unit, supplying an oligomeric silicon precursor and a nitrogen-containing gas onto the substrate on the substrate support unit through a gas supply unit, and directly generating plasma in the reaction space by applying a voltage to at least one of the substrate support unit and the gas supply unit, in which a plurality of sub-steps are performed during the supply of the oligomeric silicon precursor, in which different process parameters are applied during the plurality of sub-steps. 一种处理具有间隙的衬底的方法，包括将衬底装载到衬底支撑单元上，通过气体供应单元将低聚硅前体和含氮气体供应到衬底支撑单元上的衬底上，以及通过向衬底支撑单元和气体供应单元中的至少一个施加电压在反应空间中直接产生等离子体，其中在供应低聚硅前体期间执行多个子步骤，其中在多个子步骤期间应用不同的过程参数。