Temperature control for chemical mechanical polishing

• Main Authors: SUNDARRAJAN, HARI, ZHANG SHOUCHENG, SEKINE TAKETO, YANG YANZHU, SHEN SHIHAO, TANG JIANSHE, WU HAOSHENG
• Format: Patent
• Language: Chinese; English
• Published: 12.01.2024
• Subjects: DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS; GRINDING; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; PERFORMING OPERATIONS; POLISHING; TRANSPORTING

A chemical mechanical polishing system includes a support holding a polishing pad, a carrier head holding a substrate against the polishing pad during a polishing process, an in-situ monitoring system configured to generate a signal indicative of an amount of material on the substrate, a temperature control system configured to control the in-situ monitoring system, and a controller configured to control the in-situ monitoring system. The temperature control system controls the temperature of the grinding process, and the controller is coupled to the in-situ monitoring system and the temperature control system. A controller is configured to cause a temperature control system to change a temperature of the grinding process in response to the signal. 一种化学机械研磨系统，包括支撑件、承载头、原位监控系统、温度控制系统及控制器，所述支撑件固持研磨垫，所述承载头在研磨工艺期间将基板抵靠所述研磨垫固持，所述原位监控系统经配置产生表示所述基板上的材料量的信号，所述温度控制系统控制所述研磨工艺的温度，所述控制器耦接到所述原位监控系统和所述温度控制系统。控制器经配置使温度控制系统响应所述信号而改变所述研磨工艺的温度。