Super junction power semiconductor device and manufacturing method thereof

• Main Authors: ZHOU JINCHENG, LI ZONGQING, ZHU YUANZHENG
• Format: Patent
• Language: Chinese; English
• Published: 29.12.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to a super junction power semiconductor device and a manufacturing method thereof. Comprising a first conductive type substrate, an epitaxial layer, an insulating medium layer and source electrode metal which are sequentially arranged from bottom to top, a plurality of second conductive type columns are arranged on the side, close to the insulating medium layer, of the epitaxial layer, each second conductive type column is composed of n second conductive type short columns, and n is an integer larger than or equal to 2; setting an interface between the epitaxial layer and the insulating medium layer as a horizontal plane, wherein the second conductive type short column deflects to a plumb line of the horizontal plane; in the same second conduction type column, the deflection directions of the second conduction type short columns are consistent, and in the adjacent second conduction type columns, the deflection directions of the second conduction type short columns are opposite. According