SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME

The invention discloses a semiconductor memory device and a method of operating the semiconductor memory device. A method includes replacing an address of a first regular memory cell in a first column of regular memory cells of a first memory block with a target address, the target address being an...

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Main Authors OH YOON-NA, KIM KYUNG-RYUN, KIM HYUNG-JIN, YANG HUI-KAP, RYU JANG-WOO
Format Patent
LanguageChinese
English
Published 08.12.2023
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Abstract The invention discloses a semiconductor memory device and a method of operating the semiconductor memory device. A method includes replacing an address of a first regular memory cell in a first column of regular memory cells of a first memory block with a target address, the target address being an address of a second regular memory cell in a second column of regular memory cells of the first memory block; and reallocating an address of a second regular memory cell of a second column of regular memory cells of the first memory block to an address of a first redundant memory cell of a first redundant block of the at least one redundant block. 公开了半导体存储器装置和操作半导体存储器装置的方法。一种方法包括:将第一存储器块的第一列常规存储器单元中的第一常规存储器单元的地址替换为目标地址,所述目标地址是第一存储器块的第二列常规存储器单元中的第二常规存储器单元的地址;并且将第一存储器块的第二列常规存储器单元中的第二常规存储器单元的地址重新分配给所述至少一个冗余块中的第一冗余块的第一冗余存储器单元的地址。
AbstractList The invention discloses a semiconductor memory device and a method of operating the semiconductor memory device. A method includes replacing an address of a first regular memory cell in a first column of regular memory cells of a first memory block with a target address, the target address being an address of a second regular memory cell in a second column of regular memory cells of the first memory block; and reallocating an address of a second regular memory cell of a second column of regular memory cells of the first memory block to an address of a first redundant memory cell of a first redundant block of the at least one redundant block. 公开了半导体存储器装置和操作半导体存储器装置的方法。一种方法包括:将第一存储器块的第一列常规存储器单元中的第一常规存储器单元的地址替换为目标地址,所述目标地址是第一存储器块的第二列常规存储器单元中的第二常规存储器单元的地址;并且将第一存储器块的第二列常规存储器单元中的第二常规存储器单元的地址重新分配给所述至少一个冗余块中的第一冗余块的第一冗余存储器单元的地址。
Author OH YOON-NA
YANG HUI-KAP
RYU JANG-WOO
KIM KYUNG-RYUN
KIM HYUNG-JIN
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Snippet The invention discloses a semiconductor memory device and a method of operating the semiconductor memory device. A method includes replacing an address of a...
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Title SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME
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