Light emitting diode and light emitting device

• Main Authors: ZHOU JIAHUI, CAI JIMING, LAN YONGLING, ZHANG ZHONGYING, LONG SIYI, JIANG BIN, ZENG WEIJUN, ZANG YASHU, CHEN SIHE, YANG ZHONGJIE, CHEN GONG, HUANG SHAOHUA, ZHANG WEI, ZHANG GUOHUA
• Format: Patent
• Language: Chinese; English
• Published: 10.11.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to the technical field of semiconductor manufacturing, in particular to a light-emitting diode which comprises a semiconductor lamination layer, a first electrode, an alloy layer, a second electrode and an insulating layer, the semiconductor lamination layer comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are sequentially laminated, the first electrode is located on the first semiconductor layer, and the second electrode is located on the second semiconductor layer. The alloy layer is located on the second semiconductor layer, the second electrode covers the alloy layer, the insulating layer covers the semiconductor laminated layer, the first electrode and the second electrode, the second electrode is of a multi-layer metal structure, the surface layer, connected with the second semiconductor layer, of the second electrode is a first adhesion layer, and the surface layer, connected with the insulating layer, of the second electrode is