Method and system for reducing Zener diode temperature excursion

• Main Authors: LU HUA, WANG GANGNING, ZHU MIN
• Format: Patent
• Language: Chinese; English
• Published: 10.11.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a method and system for reducing the temperature drift of a Zener diode, and relates to the technical field of Zener diodes. According to the scheme, an existing Zener diode reducing technology is improved in method, the Zener diode and the diode are integrated into the novel low-temperature-drift integrated Zener diode, when the integrated Zener diode is developed, the temperature drift of the low-temperature-drift integrated Zener diode is adjusted by changing the concentration of the injected doped ions, and the low-temperature-drift integrated Zener diode is developed. Therefore, the electrical property of the Zener diode is changed, the integrated Zener diode can be used for a high-stability reference circuit and a gate protection device, compared with a circuit compensation method, the integrated Zener diode has the advantages that the area is saved, the purpose of reducing the chip area is achieved, and the parasitic effect is convenient to control. 本发明公开了一种降低齐纳二极管温漂的方法及系统，涉及稳压二