Lithium niobate modulator and preparation method
The invention relates to a lithium niobate modulator and a preparation method. The lithium niobate modulator comprises a silicon-based substrate, a first insulating layer, a second insulating layer, a third insulating layer, a lithium niobate optical waveguide layer and a metal electrode. The first...
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Format | Patent |
Language | Chinese English |
Published |
31.10.2023
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Abstract | The invention relates to a lithium niobate modulator and a preparation method. The lithium niobate modulator comprises a silicon-based substrate, a first insulating layer, a second insulating layer, a third insulating layer, a lithium niobate optical waveguide layer and a metal electrode. The first insulating layer is disposed over the silicon-based substrate. A silicon optical structure is arranged in the second insulating layer, and a silicon optical waveguide of the silicon optical structure is located at the top of the silicon optical structure. The third insulating layer is arranged on the second insulating layer. The lithium niobate optical waveguide layer is arranged on the third insulating layer, and the metal electrode is arranged on the lithium niobate optical waveguide layer. According to the invention, the silicon optical waveguide is arranged at the top of the silicon optical structure, and only the third insulating layer is arranged between the silicon optical waveguide and the lithium niobate o |
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AbstractList | The invention relates to a lithium niobate modulator and a preparation method. The lithium niobate modulator comprises a silicon-based substrate, a first insulating layer, a second insulating layer, a third insulating layer, a lithium niobate optical waveguide layer and a metal electrode. The first insulating layer is disposed over the silicon-based substrate. A silicon optical structure is arranged in the second insulating layer, and a silicon optical waveguide of the silicon optical structure is located at the top of the silicon optical structure. The third insulating layer is arranged on the second insulating layer. The lithium niobate optical waveguide layer is arranged on the third insulating layer, and the metal electrode is arranged on the lithium niobate optical waveguide layer. According to the invention, the silicon optical waveguide is arranged at the top of the silicon optical structure, and only the third insulating layer is arranged between the silicon optical waveguide and the lithium niobate o |
Author | ZHENG XUEYAN WAN LIWEI PENG YU WEI HONGZHEN MIAO RONGSHENG LI ZEBIN |
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DocumentTitleAlternate | 铌酸锂调制器及制备方法 |
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Snippet | The invention relates to a lithium niobate modulator and a preparation method. The lithium niobate modulator comprises a silicon-based substrate, a first... |
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SubjectTerms | DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF |
Title | Lithium niobate modulator and preparation method |
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