High electron mobility transistor and manufacturing method thereof

• Main Authors: LUO DAGANG, LIN JIANLI, CHEN ZHENGGUO, WU CHENGHAN
• Format: Patent
• Language: Chinese; English
• Published: 27.10.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a high electron mobility transistor and a manufacturing method thereof. The high electron mobility transistor comprises a substrate, a gate electrode, a drain electrode, a source electrode and a first field plate. The substrate comprises an active region, the gate electrode is arranged on the substrate, the drain electrode is arranged on one side of the gate electrode, the source electrode is arranged on the other side of the gate electrode, and the first field plate is electrically connected to the source electrode and extends from the source electrode to the drain electrode. Wherein an overlapping region of the first field plate and the gate electrode is smaller than an overlapping region of the gate electrode and the active region. 本发明公开一种高电子迁移率晶体管及其制作方法，其中该高电子迁移率晶体管包含一基底、一栅极电极、一漏极电极、一源极电极以及一第一场板。基底包含一主动区，栅极电极设置于基底上，漏极电极设置于栅极电极的一侧，源极电极设置于栅极电极的另一侧，第一场板电连接于源极电极并由源极电极往漏极电极的方向延伸，其中第一场板与栅极电极的一重叠区域小于栅极电极与主动区的一重叠区域。