Gradient doping in power elements

• Main Authors: YU LAN, BAZIZ, EL, MEHDI, PAL ASHISH, CHEN XING, SIDDAS KRISHNAN, SHERWOOD TYLER
• Format: Patent
• Language: Chinese; English
• Published: 22.09.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Various exemplary methods of forming a semiconductor structure may include forming a doped silicon layer on a semiconductor substrate. The doping level may be increased as distance from the semiconductor substrate increases. The methods may include etching the doped silicon layer to define a trench extending to the semiconductor substrate. The doped silicon layer may define sloped sidewalls of the trench. The trench may be characterized by a depth greater than or about 30 [mu] m. The methods may include lining the trench with a first oxide material. The methods may include depositing a second oxide material within the trench. These methods may include forming a contact to create a power element. 形成半导体结构的多个示例性方法可包括在半导体基板上形成掺杂硅层。可以随距该半导体基板的距离增加而增加掺杂水平。这些方法可包括蚀刻该掺杂硅层，以界定延伸至该半导体基板的沟槽。该掺杂硅层可界定该沟槽的倾斜侧壁。该沟槽的特征可在于大于或约30μm的深度。这些方法可包括用第一氧化物材料给该沟槽加衬。这些方法可包括在该沟槽内沉积第二氧化物材料。这些方法可包括形成接触部以产生功率元件。