Semiconductor element

• Main Authors: XU JIAZHE, HE ZHEYI
• Format: Patent
• Language: Chinese; English
• Published: 28.07.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a semiconductor element, which mainly comprises a gate structure arranged on a substrate and an epitaxial layer arranged beside the gate structure, the epitaxial layer includes a first buffer layer, a second buffer layer disposed on the first buffer layer, a body layer dispos...