Method for producing semiconductor body and semiconductor device

• Main Authors: VON MALM NORWIN, AVRAMESCU ADRIAN, STAUSS PETER
• Format: Patent
• Language: Chinese; English
• Published: 25.07.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to a method for producing a semiconductor body, wherein an auxiliary carrier is provided. A sequence of layers is produced on the auxiliary support, comprising a first layer having a doped semiconductor material and a second layer applied thereon, the second layer having an undoped semiconductor material. A first layer of the sequence of layers is electrochemically porous, wherein the porosity is at least 20% by volume. A mesa structure is then formed in the porous first layer and the second layer and a functional layer sequence having at least one flat third layer, which is applied to the second layer provided with the mesa structure, is produced. The at least one planar third layer has a different lattice constant than the second layer. 本发明涉及一种用于制造半导体本体的方法，其中提供辅助载体。在所述辅助载体上产生层序列，其包括具有掺杂的半导体材料的第一层和在其上施加的第二层，所述第二层具有未掺杂的半导体材料。将层序列的第一层电化学地多孔化，其中孔隙度为至少20体积％。然后在经多孔化的第一层和第二层中构成台地结构并且产生具有至少一个平坦的第三层的功能性的层序列，所述第三层施加在设有台地结构的第二层上。至少一个平坦的第三层具有与第二层不同的晶格常数。