Formation and processing of single chamber flowable films
An exemplary processing method may include forming a plasma of a silicon-containing precursor. The method may include depositing a flowable film on a semiconductor substrate having a plasma effluent of a silicon-containing precursor. A semiconductor substrate may be received in a processing region o...
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Format | Patent |
Language | Chinese English |
Published |
04.07.2023
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Abstract | An exemplary processing method may include forming a plasma of a silicon-containing precursor. The method may include depositing a flowable film on a semiconductor substrate having a plasma effluent of a silicon-containing precursor. A semiconductor substrate may be received in a processing region of a semiconductor processing chamber. A processing region may be defined between the panel and a substrate support on which the semiconductor substrate is located. The method may include forming a processing plasma within a processing region of a semiconductor processing chamber. A processing plasma may be formed from a first power level of a first power source. A second power may be applied to the substrate support from a second power source at a second power level. The method may include densifying a flowable film within a defined feature within a semiconductor substrate with a plasma effluent of a processing plasma.
示例性处理方法可包括形成含硅前驱物的等离子体。所述方法可以包括在具有含硅前驱物的等离子体流出物的半导体基板上沉积可流动膜。半导体基板可以容纳在半导体处理腔室的处理区域中。处理区域可以限定在面板和 |
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AbstractList | An exemplary processing method may include forming a plasma of a silicon-containing precursor. The method may include depositing a flowable film on a semiconductor substrate having a plasma effluent of a silicon-containing precursor. A semiconductor substrate may be received in a processing region of a semiconductor processing chamber. A processing region may be defined between the panel and a substrate support on which the semiconductor substrate is located. The method may include forming a processing plasma within a processing region of a semiconductor processing chamber. A processing plasma may be formed from a first power level of a first power source. A second power may be applied to the substrate support from a second power source at a second power level. The method may include densifying a flowable film within a defined feature within a semiconductor substrate with a plasma effluent of a processing plasma.
示例性处理方法可包括形成含硅前驱物的等离子体。所述方法可以包括在具有含硅前驱物的等离子体流出物的半导体基板上沉积可流动膜。半导体基板可以容纳在半导体处理腔室的处理区域中。处理区域可以限定在面板和 |
Author | LAI CANFENG PAUL KHOURY C FISCHBACH ADAM J TANAKA TSUTOMU |
Author_xml | – fullname: FISCHBACH ADAM J – fullname: PAUL KHOURY C – fullname: TANAKA TSUTOMU – fullname: LAI CANFENG |
BookMark | eNrjYmDJy89L5WSwdMsvyk0syczPU0jMS1EoKMpPTi0uzsxLV8hPUwDROakKyRmJuUmpRQppOfnliUlAgbTMnNxiHgbWtMSc4lReKM3NoOjmGuLsoZtakB-fWlyQmJyal1oS7-xnaGhmbGloZGLhaEyMGgBLWjBz |
ContentType | Patent |
DBID | EVB |
DatabaseName | esp@cenet |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Medicine Chemistry Sciences |
DocumentTitleAlternate | 单腔室可流动膜的形成和处理 |
ExternalDocumentID | CN116391248A |
GroupedDBID | EVB |
ID | FETCH-epo_espacenet_CN116391248A3 |
IEDL.DBID | EVB |
IngestDate | Fri Jul 19 14:19:16 EDT 2024 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | Chinese English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-epo_espacenet_CN116391248A3 |
Notes | Application Number: CN202180070030 |
OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230704&DB=EPODOC&CC=CN&NR=116391248A |
ParticipantIDs | epo_espacenet_CN116391248A |
PublicationCentury | 2000 |
PublicationDate | 20230704 |
PublicationDateYYYYMMDD | 2023-07-04 |
PublicationDate_xml | – month: 07 year: 2023 text: 20230704 day: 04 |
PublicationDecade | 2020 |
PublicationYear | 2023 |
RelatedCompanies | APPLIED MATERIALS, INC |
RelatedCompanies_xml | – name: APPLIED MATERIALS, INC |
Score | 3.5896392 |
Snippet | An exemplary processing method may include forming a plasma of a silicon-containing precursor. The method may include depositing a flowable film on a... |
SourceID | epo |
SourceType | Open Access Repository |
SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | Formation and processing of single chamber flowable films |
URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230704&DB=EPODOC&locale=&CC=CN&NR=116391248A |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQSbFIM7ZMMTLWTTVJSdU1MTUCloNpwIwHTEtpwOg2T0wyBm1O9vUz8wg18YowjWBiyILthQGfE1oOPhwRmKOSgfm9BFxeFyAGsVzAayuL9ZMygUL59m4hti5q0N4xaFUzMNJdnGxdA_xd_J3VnJ1tnf3U_IJsDYHtDktgXWbhyMzACmpGg87Zdw1zAu1KKUCuUtwEGdgCgKbllQgxMFVlCDNwOsNuXhNm4PCFTngDmdC8VyzCYOkG22eoAOz9KxRAVvgDax6F_DQFEJ2TqpCckQi64EMhLSe_HLQnSiEtMye3WJRB0c01xNlDF-iGeLiH4539EM41FmNgycvPS5VgUDAwM0oBNicMk5OMga0Y0I5VI2DT2DTFLNHSJCXR0ESSQQq3OVL4JKUZuECBB16GaiLDwFJSVJoqC6xsS5LkwKEEABOGgnA |
link.rule.ids | 230,309,786,891,25594,76906 |
linkProvider | European Patent Office |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwED_mFOebTkXnVwTpW9F-rFsfirh0peraDamyt9JPNqltsZWBf72X2jpf9CkhgZBccrlfkvtdAK7CYSypoSjxkRxGvNwXcR-MUfFwLcU43QPPlxg52bIV81l-mPfnLXhtuDBVnNBVFRwRNSpAfS-r_TpfX2LplW9lce0vsSi7NRxN5-rTMfNqxknXR9p4NtWnlKNUozZnP2kC4g4VbdnwbgM2Byw6L4NOLyPGSsl_mxRjF7Zm2Fpa7kHrc9GFDm1-XuvCtlU_eGO21r1iH1Sj4RkSPP2T_NvDHy0PyWLC0iQiwcJjH3yQOMlWjBNF4mXyVhzApTF2qMljH9yfAbvUXndXOoR2mqXREZAbRQwRTgiBLyGKYYxVEaFxP1Q8VQ49QT6G3t_t9P6rvICO6VgTd3JvP57ADhNk5ZIqn0K7fP-IztDwlv55JbEvVY-FXQ |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Formation+and+processing+of+single+chamber+flowable+films&rft.inventor=FISCHBACH+ADAM+J&rft.inventor=PAUL+KHOURY+C&rft.inventor=TANAKA+TSUTOMU&rft.inventor=LAI+CANFENG&rft.date=2023-07-04&rft.externalDBID=A&rft.externalDocID=CN116391248A |