Formation and processing of single chamber flowable films

• Main Authors: FISCHBACH ADAM J, PAUL KHOURY C, TANAKA TSUTOMU, LAI CANFENG
• Format: Patent
• Language: Chinese; English
• Published: 04.07.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

An exemplary processing method may include forming a plasma of a silicon-containing precursor. The method may include depositing a flowable film on a semiconductor substrate having a plasma effluent of a silicon-containing precursor. A semiconductor substrate may be received in a processing region of a semiconductor processing chamber. A processing region may be defined between the panel and a substrate support on which the semiconductor substrate is located. The method may include forming a processing plasma within a processing region of a semiconductor processing chamber. A processing plasma may be formed from a first power level of a first power source. A second power may be applied to the substrate support from a second power source at a second power level. The method may include densifying a flowable film within a defined feature within a semiconductor substrate with a plasma effluent of a processing plasma. 示例性处理方法可包括形成含硅前驱物的等离子体。所述方法可以包括在具有含硅前驱物的等离子体流出物的半导体基板上沉积可流动膜。半导体基板可以容纳在半导体处理腔室的处理区域中。处理区域可以限定在面板和