Capacitor and manufacturing method and working method thereof
The invention provides a capacitor and a manufacturing method and a working method thereof, and the capacitor comprises a substrate which is provided with a first dielectric layer, and a metal interconnection line is formed in the first dielectric layer; the lower pole plate, the second dielectric l...
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Main Authors | , , |
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Format | Patent |
Language | Chinese English |
Published |
02.06.2023
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Subjects | |
Online Access | Get full text |
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Summary: | The invention provides a capacitor and a manufacturing method and a working method thereof, and the capacitor comprises a substrate which is provided with a first dielectric layer, and a metal interconnection line is formed in the first dielectric layer; the lower pole plate, the second dielectric layer and the upper pole plate are formed on part of the first dielectric layer from bottom to top; the first conductive structure is electrically connected with the upper polar plate, the second conductive structure is electrically connected with the lower polar plate, and the third conductive structure is electrically connected with the metal interconnection line. According to the technical scheme of the invention, the capacitor has four variable capacitance values, and meanwhile, the increase of the process complexity, the increase of the cost and the waste of the chip area can be avoided.
本发明提供一种电容器及其制造方法、工作方法,电容器包括:形成有第一介质层的衬底,第一介质层中形成有金属互连线;自下向上形成于部分第一介质层上的下极板、第二介质层和上极板;第一导电结构、第二导电结构和第三导电结构,第一导电结构与上极板电连接,第二导电结 |
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Bibliography: | Application Number: CN202310174138 |