Gate structure of semiconductor device and forming method thereof

• Main Authors: LI XINYI, ZHANG WEN, XU ZHI'AN
• Format: Patent
• Language: Chinese; English
• Published: 09.05.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to a gate structure of a semiconductor device and a method of forming the same. A semiconductor device and a method of forming the same are provided. The method includes forming a fin extending from a substrate. A dummy gate is formed over the fin. A dummy gate extends along sidewalls and a top surface of the fin. The dummy gate is removed to form a recess. A replacement gate is formed in the recess. Forming the replacement gate includes forming an interface layer along sidewalls and a bottom of the recess. A dipole layer is formed over the interface layer. The dipole layer includes metal atoms. Fluorine atoms are introduced into the dipole layer. Fluorine atoms and metal atoms from the dipole layer are driven into the interface layer. And removing the dipole layer. 本公开涉及半导体器件的栅极结构及其形成方法。提供了一种半导体器件及其形成方法。该方法包括形成从衬底延伸的鳍。在鳍之上形成虚设栅极。虚设栅极沿着鳍的侧壁和顶表面延伸。去除虚设栅极以形成凹部。在凹部中形成替换栅极。形成替换栅极包括沿着凹部的侧壁和底部形成界面层。在界面层之上形成偶极层。偶极层包括金属原子。在偶极层中引入氟原子。将来自偶极层的氟原子和金属原子驱动到界面层中。去除偶极层。