Integrated assembly and method of forming integrated assembly

• Main Authors: HWANG DAVID K, HILL RICHARD J, SANDHU GURTEJ S
• Format: Patent
• Language: Chinese; English
• Published: 02.05.2023
• Subjects: ELECTRICITY

Some embodiments include an integrated assembly having a first conductive structure extending along a first direction. A spaced upwardly open container shape is over the first conductive structure. Each of the container shapes has a first sidewall region, a second sidewall region, and a bottom region extending from the first sidewall region to the second sidewall region. Each of the first and second sidewall regions includes a lower source/drain region, an upper source/drain region, and a channel region between the upper and lower source/drain regions. The lower source/drain region is electrically coupled with the first conductive structure. The second conductive structure extends in a second direction crossing the first direction. The second conductive structure has a gate region operatively adjacent to the channel region. A memory element is electrically coupled with the upper source/drain region. Some embodiments include methods of forming an integrated assembly. 一些实施例包含具有沿着第一方向延伸的第一导电结构的集成组合件。间隔开的向上开口的容器形