Method for realizing temperature distribution required by growth of aluminum nitride single crystal

• Main Authors: WANG YINGMIN, HAO JIANMIN, LAI ZHANPING, CHENG HONGJUAN, SHI YUEZENG, WANG ZENGHUA, ZHANG LI, YIN LIYING
• Format: Patent
• Language: Chinese; English
• Published: 07.04.2023
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The invention discloses a method for realizing temperature distribution required by aluminum nitride single crystal growth. Under the condition that a double-heater thermal field is not arranged in an adopted high-temperature furnace, a round heater is vertically placed in the high-temperature furnace, a tungsten crucible and a round tungsten sleeve are coaxially placed in the high-temperature furnace, and the bottoms of the round tungsten sleeve and the tungsten crucible and the middle of the round heater in the vertical direction are located on the same horizontal plane; the circular tungsten sleeve is divided into a thin-wall area and a thick-wall area. A tungsten sleeve with a specific shape is nested on the outer side of a tungsten crucible, and accurate reconstruction of a temperature distribution mode is realized by utilizing the characteristics of high heat conductivity and high specific heat capacity of metal tungsten, so that the requirement of aluminum nitride single crystal growth on temperature d