Method of forming semiconductor device

• Main Authors: CHEN SHUHAN, CHEN JUNHONG, CHEN ZONGRU, XU ZHI'AN
• Format: Patent
• Language: Chinese; English
• Published: 31.03.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method includes forming dummy gate oxides on a wafer, and the dummy gate oxides are formed on sidewalls and top surfaces of protruding semiconductor fins in the wafer. The formation of the dummy gate oxide may include a plasma enhanced chemical vapor deposition (PECVD) process in the deposition chamber, and the PECVD process includes applying radio frequency (RF) power to a conductive plate below the wafer. The method further includes forming a dummy gate electrode over the dummy gate oxide, removing the dummy gate electrode and the dummy gate oxide to form a trench between the opposing gate spacers, and forming a replacement gate in the trench. The embodiment of the invention also relates to a method for forming the semiconductor device. 一种方法包括在晶圆上形成伪栅极氧化物，并且伪栅极氧化物形成在晶圆中的突出半导体鳍的侧壁和顶面上。伪栅极氧化物的形成可以包括沉积室中的等离子体增强化学气相沉积(PECVD)工艺，并且PECVD工艺包括将射频(RF)功率施加至晶圆下方的导电板。该方法还包括在伪栅极氧化物上方形成伪栅电极，去除伪栅电极和伪栅极氧化物以在相对的栅极间隔件之间形成沟槽，以及在沟槽中形成替换栅极。本申请的实施例还涉及形成半导体器件的方法。