Transmission zero adjustable filter based on silicon through hole technology
The invention discloses a transmission zero adjustable filter based on a silicon through hole technology, which comprises an upper layer RDL and a lower layer RDL which are arranged in parallel along the horizontal direction, a silicon-based substrate is arranged between the upper layer RDL and the...
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Format | Patent |
Language | Chinese English |
Published |
28.03.2023
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Abstract | The invention discloses a transmission zero adjustable filter based on a silicon through hole technology, which comprises an upper layer RDL and a lower layer RDL which are arranged in parallel along the horizontal direction, a silicon-based substrate is arranged between the upper layer RDL and the lower layer RDL, three resonant cavities formed by TSV are sequentially arranged on the silicon-based substrate along the horizontal direction, and a resonant cavity transmission base mode is arranged in the middle. The resonant cavities located on the two sides are subjected to degenerate mode separation and then coupled with the resonant cavity in the middle, a passband is formed, and two movable transmission zero points are generated. Under the condition of not increasing an extra circuit area, a relatively good out-of-band blocking characteristic can be realized, and the in-pass-band performance is good.
本发明公开了一种硅通孔技术的传输零点可调滤波器,包括沿水平方向平行设置的上层RDL和下层RDL,上层RDL和下层RDL之间设有硅基衬底,硅基衬底上沿水平方向依次设有三个由TSV构成的谐振腔,位于中间的谐振腔传输基模, |
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AbstractList | The invention discloses a transmission zero adjustable filter based on a silicon through hole technology, which comprises an upper layer RDL and a lower layer RDL which are arranged in parallel along the horizontal direction, a silicon-based substrate is arranged between the upper layer RDL and the lower layer RDL, three resonant cavities formed by TSV are sequentially arranged on the silicon-based substrate along the horizontal direction, and a resonant cavity transmission base mode is arranged in the middle. The resonant cavities located on the two sides are subjected to degenerate mode separation and then coupled with the resonant cavity in the middle, a passband is formed, and two movable transmission zero points are generated. Under the condition of not increasing an extra circuit area, a relatively good out-of-band blocking characteristic can be realized, and the in-pass-band performance is good.
本发明公开了一种硅通孔技术的传输零点可调滤波器,包括沿水平方向平行设置的上层RDL和下层RDL,上层RDL和下层RDL之间设有硅基衬底,硅基衬底上沿水平方向依次设有三个由TSV构成的谐振腔,位于中间的谐振腔传输基模, |
Author | YU NINGMEI YOON SANG-GON YANG YUAN ZHU ZHANGMING YANG ZHUOYU WANG FENGJUAN |
Author_xml | – fullname: WANG FENGJUAN – fullname: YANG ZHUOYU – fullname: ZHU ZHANGMING – fullname: YU NINGMEI – fullname: YANG YUAN – fullname: YOON SANG-GON |
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DocumentTitleAlternate | 基于硅通孔技术的传输零点可调滤波器 |
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Snippet | The invention discloses a transmission zero adjustable filter based on a silicon through hole technology, which comprises an upper layer RDL and a lower layer... |
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Title | Transmission zero adjustable filter based on silicon through hole technology |
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