Transistor parameter testing device and testing method

• Main Author: LIU LIANXIANG
• Format: Patent
• Language: Chinese; English
• Published: 24.03.2023
• Subjects: MEASURING; MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES; PHYSICS; TESTING

The invention provides a transistor parameter testing device and method, and relates to the field of semiconductor device measurement, the device comprises a controller, a constant-voltage constant-current circuit and a testing circuit, the output end of the constant-voltage constant-current circuit is connected with the drain electrode of a transistor to be tested, and constant voltage and constant current are provided for the transistor to be tested; the input end of the test circuit is connected with the first output end of the controller, the first output end is connected with the transistor to be tested, the second output end is connected with the input end of the controller, and voltage and current signals of the transistor to be tested are collected; the constant-voltage and constant-current circuit comprises a resistor array; the controller determines the parameter value of the transistor to be tested according to the voltage and current signals of the transistor to be tested collected by the test cir