Three-dimensional memory, preparation method thereof and memory system

• Main Author: GAO TINGTING
• Format: Patent
• Language: Chinese; English
• Published: 07.03.2023
• Subjects: ELECTRICITY

The embodiment of the invention provides a three-dimensional memory, a manufacturing method thereof and a memory system. The three-dimensional memory includes: a semiconductor layer; the stacked structure is located on one side of the semiconductor layer; the channel structure penetrates through the stacked structure in the direction perpendicular to the semiconductor layer, and in the same plane perpendicular to the semiconductor layer, the section size of the channel structure on the surface, away from the semiconductor layer, of the stacked structure is larger than the section size of the channel structure on the surface, close to the semiconductor layer, of the stacked structure; the grid line gap structure penetrates through the stacking structure in the direction perpendicular to the semiconductor layer, extends in the direction parallel to the semiconductor layer, and is in a plane perpendicular to the extending direction; the sectional dimension of at least part of the grid line gap structure on the s