Semiconductor structure and manufacturing method thereof

• Main Authors: ZONGHAN ZHUANG, ZHANG RONGHONG, CHEN SHICHENG, JIANG GUOCHENG, YAO QIANNING, LIN ZHICHANG
• Format: Patent
• Language: Chinese; English
• Published: 07.03.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a substrate and a bottom isolation feature formed over the substrate. The semiconductor structure also includes a bottom semiconductor layer formed over the bottom isolation feature and a nanostructure formed over the bottom semiconductor layer. The semiconductor structure also includes a source/drain structure connected to the nanostructure and covering a portion of the bottom isolation feature. 提供了半导体结构及其制造方法。半导体结构包括衬底和形成在衬底上方的底部隔离部件。半导体结构还包括形成在底部隔离部件上方的底部半导体层和形成在底部半导体层上方的纳米结构。半导体结构还包括连接到纳米结构并且覆盖底部隔离部件的部分的源极/漏极结构。