Semiconductor device and forming method thereof

• Main Authors: JANG CHEOL HO, HOU CHENGHAO, LEE DAL-WON, XU ZHI'AN
• Format: Patent
• Language: Chinese; English
• Published: 03.03.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

In an embodiment, a semiconductor device includes a first gate dielectric on a first channel region of a first semiconductor component; a first gate electrode on the first gate dielectric; a second gate dielectric on a second channel region of the second semiconductor component, the second gate dielectric having a greater crystallinity than the first gate dielectric; and a second gate electrode on the second gate dielectric. The embodiment of the invention also provides a method for forming the semiconductor device. 在实施例中，半导体器件包括：第一半导体部件的第一沟道区上的第一栅极电介质；第一栅极电介质上的第一栅电极；第二半导体部件的第二沟道区上的第二栅极电介质，第二栅极电介质具有比第一栅极电介质大的结晶度；以及第二栅电介质上的第二栅电极。本发明的实施例还提供了形成半导体器件的方法。