Power semiconductor device with strain inducing material embedded in electrode

• Main Authors: KHANNA SAURABH, SCHULZ HANS-JUERGEN, ROY SASHWATI, BLANC OLIVIER, STADTM ¨ 1 LLER, MICHAEL, DENIFL, G ¨ 1 NTER, GALASSO GIUSEPPE
• Format: Patent
• Language: Chinese; English
• Published: 06.01.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A power semiconductor device having a strain inducing material embedded in an electrode. A semiconductor device is described. The semiconductor device includes: a semiconductor substrate; an electrode structure on or in the semiconductor substrate, the electrode structure including an electrode and an insulating material separating the electrode from the semiconductor substrate; and a strain inducing material embedded in the electrode. The electrode structure adjoins a region of the semiconductor substrate through which current flows in a first direction during operation of the semiconductor device. The electrodes are under tensile or compressive stress in the first direction. The strain inducing material enhances or at least partially counteracts the stress of the electrode in the first direction. Methods of producing semiconductor devices are also described. 具有嵌入电极中的应变诱导材料的功率半导体器件。描述了一种半导体器件。该半导体器件包括：半导体衬底；在半导体衬底上或半导体衬底中的电极结构，该电极结构包括电极和将电极与半导体衬底分离的绝缘材料；以及嵌入在电极中的应变诱导材料。电极结构邻接半导体衬底的区，在半导体器件的操作期间电流在第一方向上流过该区。电