Film comprising Hf-Zr with intrinsic ferroelectricity
The disclosed and claimed subject matter relates to crystalline ferroelectric materials comprising a mixture of hafnium oxide and zirconium oxide having a large amount (i.e., about 40% or more) or a majority of the material in a ferroelectric phase upon deposition (i.e., without further processing s...
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Main Authors | , , , , |
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Format | Patent |
Language | Chinese English |
Published |
23.12.2022
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Subjects | |
Online Access | Get full text |
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Summary: | The disclosed and claimed subject matter relates to crystalline ferroelectric materials comprising a mixture of hafnium oxide and zirconium oxide having a large amount (i.e., about 40% or more) or a majority of the material in a ferroelectric phase upon deposition (i.e., without further processing such as subsequent covering or annealing) and methods for making and depositing these materials.
所公开并要求保护的主题涉及结晶铁电材料,其包含氧化铪及氧化锆的混合物,具有大量(即约40%或更多)或大部分的该材料在沉积时(即不需要进一步加工诸如后续覆盖或退火)呈铁电相及用于制备及沉积这些材料的方法。 |
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Bibliography: | Application Number: CN202180033920 |