Film comprising Hf-Zr with intrinsic ferroelectricity

• Main Authors: NARASIMHAN VINOD KUMAR, LEHN JEAN-SEBASTIEN M, RITTAU KATARINA, WOODRUFF JOHN, KANJOLIA, RAVI
• Format: Patent
• Language: Chinese; English
• Published: 23.12.2022
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The disclosed and claimed subject matter relates to crystalline ferroelectric materials comprising a mixture of hafnium oxide and zirconium oxide having a large amount (i.e., about 40% or more) or a majority of the material in a ferroelectric phase upon deposition (i.e., without further processing such as subsequent covering or annealing) and methods for making and depositing these materials. 所公开并要求保护的主题涉及结晶铁电材料，其包含氧化铪及氧化锆的混合物，具有大量(即约40％或更多)或大部分的该材料在沉积时(即不需要进一步加工诸如后续覆盖或退火)呈铁电相及用于制备及沉积这些材料的方法。