Plasma confinement ring, semiconductor manufacturing apparatus, and semiconductor device manufacturing method

• Main Authors: PAEK SEUNG-HAN, AHN SEUNG-BIN, YANG JUNG MO, KO JUNG-MIN, KIM NAM-GYUN, KIM TAE-HYUN, NAM SANG KI, XU QUANXIANG, JEON KANGMIN, JANG SUNG-HO, LEE CHANG HEON, YOON KUI-HYUN
• Format: Patent
• Language: Chinese; English
• Published: 01.11.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRICITY

A plasma confinement ring, a semiconductor manufacturing apparatus including the plasma confinement ring, and a method of manufacturing a semiconductor device using the semiconductor manufacturing apparatus are provided. The plasma confinement ring includes a lower ring, an upper ring on the lower ring, and a connecting ring extending to connect the lower ring to the upper ring. The lower ring includes a lower center hole vertically penetrating the lower ring at a center of the lower ring and at least one slit penetrating the lower ring in a region outside the lower center hole. The slit is configured to pass a greater amount of air or gas at a first portion closer to the center of the lower ring than at a second portion farther from the center of the lower ring. 提供了一种等离子体约束环、包括该等离子体约束环的半导体制造设备以及使用该半导体制造设备制造半导体装置的方法。所述等离子体约束环包括下环、在下环上的上环以及延伸以将下环连接到上环的连接环。下环包括在下环的中心处竖直地穿透下环的下中心孔以及在下中心孔外部的区域中穿透下环的至少一个狭缝。狭缝被构造为在更靠近下环的中心的第一部分处比在更远离下环的中心的第二部分处通过更大量的空气或气体。