Crystal growth device and method, and TGS crystal

• Main Authors: LIU LIANG, LI XIAOPING, XU YUNFEI, LEI QI, LUO HONGZHI, GAN SHENGQUAN, LI JIANMIN, MAO WEI, HE LIANG, ZHANG CUNXIN, ZHOU CHENG, XIONG RENGEN
• Format: Patent
• Language: Chinese; English
• Published: 25.10.2022
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The invention discloses a crystal growth device, a crystal growth method and a TGS type crystal. The crystal growth device comprises a water tank, a growth chamber, a seed crystal rod and a seed crystal, the water tank is an annular tank body and completely or partially surrounds the side part and the bottom of the growth chamber; a water inlet and a water outlet are formed in the side surface and/or the upper end surface of the water tank; an insulating cover is arranged on the upper end surface of the growth chamber and/or the upper end surface of the water tank; the seed crystal is adhered to the lower end of the seed crystal rod; the seed crystal rod can enter and exit from the growth chamber; a heat transfer medium inlet and a heat transfer medium outlet are formed in the seed rod. According to the invention, through bidirectional temperature control of the water tank and the seed rod, the temperature and the degree of supercooling at the growth position of the seed crystal can be adjusted according to t