Semiconductor device and manufacturing method thereof

• Main Authors: CHEN WENBIN, CHEN ZUWEI, YANG JINJIA
• Format: Patent
• Language: Chinese; English
• Published: 13.09.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a semiconductor device and a manufacturing method thereof. The semiconductor device comprises a substrate, a first transistor and a second transistor. The first transistor is arranged on the substrate and comprises a first metal oxide semiconductor layer. The second transistor is arranged on the substrate and comprises a second metal oxide semiconductor layer and a third metal oxide semiconductor layer. The third metal oxide semiconductor layer is directly stacked on the second metal oxide semiconductor layer. The second metal oxide semiconductor layer and the first metal oxide semiconductor layer belong to the same film layer. The oxygen concentration of the first metal oxide semiconductor layer is lower than the oxygen concentration of the second metal oxide semiconductor layer, and the oxygen concentration of the second metal oxide semiconductor layer is lower than the oxygen concentration of the third metal oxide semiconductor layer. 一种半导体装置及其制作方法，半导体装置包括：基板、第一晶体管以及第二晶体管。第一晶体管设置于基板