Semiconductor device layout structure and forming method thereof

The invention provides a semiconductor device layout structure and a forming method thereof, a redundant pattern region of the semiconductor device layout structure is provided with at least two first redundant patterns and at least two second redundant patterns, each first redundant pattern compris...

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Main Authors WANG HUANCHEN, CHEN SHICHANG, CHEN XING, ZHANG ZHEN
Format Patent
LanguageChinese
English
Published 02.09.2022
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Abstract The invention provides a semiconductor device layout structure and a forming method thereof, a redundant pattern region of the semiconductor device layout structure is provided with at least two first redundant patterns and at least two second redundant patterns, each first redundant pattern comprises a first redundant active region pattern which is the same as an active region pattern of a device pattern region, and each second redundant pattern comprises a second redundant active region pattern which is the same as an active region pattern of a device pattern region; the at least two first redundant gate patterns are located on the first redundant active region pattern and are the same as the gate patterns of the device pattern region, and each second redundant pattern comprises a second redundant active region pattern and a second redundant gate pattern located on the second redundant active region pattern; the projection of the second redundant gate pattern is in the projection of the second redundant act
AbstractList The invention provides a semiconductor device layout structure and a forming method thereof, a redundant pattern region of the semiconductor device layout structure is provided with at least two first redundant patterns and at least two second redundant patterns, each first redundant pattern comprises a first redundant active region pattern which is the same as an active region pattern of a device pattern region, and each second redundant pattern comprises a second redundant active region pattern which is the same as an active region pattern of a device pattern region; the at least two first redundant gate patterns are located on the first redundant active region pattern and are the same as the gate patterns of the device pattern region, and each second redundant pattern comprises a second redundant active region pattern and a second redundant gate pattern located on the second redundant active region pattern; the projection of the second redundant gate pattern is in the projection of the second redundant act
Author ZHANG ZHEN
CHEN SHICHANG
CHEN XING
WANG HUANCHEN
Author_xml – fullname: WANG HUANCHEN
– fullname: CHEN SHICHANG
– fullname: CHEN XING
– fullname: ZHANG ZHEN
BookMark eNrjYmDJy89L5WRwCE7NzUzOz0spTS7JL1JISS3LTE5VyEmszC8tUSguKQIKlxalKiTmpSik5RflZualK-SmlmTkpyiUZKQWpean8TCwpiXmFKfyQmluBkU31xBnD93Ugvz41OKCxOTUvNSSeGc_Q0NTAyAwM3A0JkYNADHEM5A
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
DocumentTitleAlternate 半导体器件版图结构及其形成方法
ExternalDocumentID CN115000060A
GroupedDBID EVB
ID FETCH-epo_espacenet_CN115000060A3
IEDL.DBID EVB
IngestDate Fri Jul 19 14:48:53 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language Chinese
English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_CN115000060A3
Notes Application Number: CN202210844793
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220902&DB=EPODOC&CC=CN&NR=115000060A
ParticipantIDs epo_espacenet_CN115000060A
PublicationCentury 2000
PublicationDate 20220902
PublicationDateYYYYMMDD 2022-09-02
PublicationDate_xml – month: 09
  year: 2022
  text: 20220902
  day: 02
PublicationDecade 2020
PublicationYear 2022
RelatedCompanies HEFEI NEXCHIP INTEGRATED CIRCUIT CO., LTD
RelatedCompanies_xml – name: HEFEI NEXCHIP INTEGRATED CIRCUIT CO., LTD
Score 3.5497139
Snippet The invention provides a semiconductor device layout structure and a forming method thereof, a redundant pattern region of the semiconductor device layout...
SourceID epo
SourceType Open Access Repository
SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title Semiconductor device layout structure and forming method thereof
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220902&DB=EPODOC&locale=&CC=CN&NR=115000060A
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3fS8MwED7mFPVNp6LzBxGkb8Xapt36UNSlLUNYN3TK3kbTpkyRdmwdon-9l6xzvuhbSCBcDi73JfnuC8AVbbs0ThxDx9yZ6JQbXG9T19FbGTduEjOzbC7rnXuR032mDyN7VIO3VS2M0gn9UOKIGFEJxnup9uvp-hLLV9zK-TV_xa7iNhx6vladjk1T0gw1v-MFg77fZxpjHou06NGTwEeJj9xvwCbC6JakfwUvHVmVMv2dUsI92BrgbHm5D7WvSQN22OrntQZs96oHb2xWsTc_gLsnyWMvcinQWsxIKmSMk_f4s1iUZCkDu5gJEucpkUAUUxJZfg9NJMYTRXYIl2EwZF0dTRn_rHvMorXV1hHU8yIXx0ASyuOMWxk6VlBDcNdKuRXbDp6dUgQX2Qk0_56n-d_gKexKHyoKlXkGdTRdnGPOLfmFctY3GtmG0w
link.rule.ids 230,309,783,888,25578,76884
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3fS8MwED7mFOebTkXnrwjSt2Jts7o9FHXpStWtGzplb6VpU1SkHVuH6F_vJducL_oWEjguB5f7Lrn7AnBGG00axbahY-yMdcoNrjdo09YvU25cxGZq1bnsd-4Gtv9E74b1YQneFr0wiif0Q5EjokfF6O-FOq9Hy0ssV9VWTs75K07lV97AcbV5dmyassxQc1tOu99ze0xjzGGBFjw4Evgo8pGbFVhFiN2QPPvt55bsShn9DineJqz1UVpWbEHp66UKFbb4ea0K6935gzcO57432YbrR1nHnmeSoDUfk0RIHyfv0Wc-LciMBnY6FiTKEiKBKIYkMvsemkiMJ_J0B0699oD5OqoS_uw7ZMFSa2sXylmeiT0gMeVRyq0UDSuoIXjTSrgV1W3MnRIEF-k-1P6WU_tv8QQq_qDbCTu3wf0BbEh7qnIq8xDKuA1xhPG34MfKcN-Vb4nD
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Semiconductor+device+layout+structure+and+forming+method+thereof&rft.inventor=WANG+HUANCHEN&rft.inventor=CHEN+SHICHANG&rft.inventor=CHEN+XING&rft.inventor=ZHANG+ZHEN&rft.date=2022-09-02&rft.externalDBID=A&rft.externalDocID=CN115000060A