Semiconductor device

• Main Authors: CHEN DIANHAO, HUANG ZHENQIU, ZHENG KAIWEN, HUANG ZHIFAN, CHEN YANMING
• Format: Patent
• Language: Chinese; English
• Published: 05.08.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a semiconductor device. A semiconductor device includes a first conductive feature on a semiconductor substrate, a bottom electrode on the first conductive feature, a magnetic tunnel junction stack on the bottom electrode, and a top electrode on the magnetic tunnel junction stack. The spacer contacts sidewalls of the top electrode, sidewalls of the magnetic tunnel junction stack, and sidewalls of the bottom electrode. The conductive feature contacts the top electrode. 本公开提出一种半导体装置。半导体装置包含位于半导体基板上的第一导电特征部件、位于第一导电特征部件上的底部电极、位于底部电极上的磁性穿隧接面堆叠以及位于磁性穿隧接面堆叠上的顶部电极。间隔物接触顶部电极侧壁、磁性穿隧接面堆叠的侧壁以及底部电极的侧壁。导电特征部件接触顶部电极。