Ultra-wide efficient inverse class-F power amplifier based on elliptical low-pass filtering matching network

The invention discloses an ultra-wide high-efficiency inverse class F power amplifier based on an elliptical low-pass filtering matching network. A grid direct current bias network is used for providing grid bias voltage required by working of a power amplification transistor; the drain direct-curre...

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Bibliographic Details
Main Authors LAI ZEJIE, CHENG ZHIQUN, LIN YIJUN, LIU GUOHUA, ZHONG HUABANG
Format Patent
LanguageChinese
English
Published 15.07.2022
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Summary:The invention discloses an ultra-wide high-efficiency inverse class F power amplifier based on an elliptical low-pass filtering matching network. A grid direct current bias network is used for providing grid bias voltage required by working of a power amplification transistor; the drain direct-current bias network is used for providing drain bias voltage required by the work of the power amplification transistor; the input end impedance matching network comprises a microstrip line, a blocking capacitor and an RC parallel circuit; the output end impedance matching network comprises a harmonic control network and an elliptical low-pass filtering matching network, and the harmonic control network selects two frequency points outside a passband to perform secondary harmonic control; the elliptic low-pass filtering matching network is obtained by improving a six-order Chebyshev low-pass filter, two transmission zero points are generated outside a working frequency band, and conversion from fundamental wave impedan
Bibliography:Application Number: CN202210322208