Manufacturing method of semiconductor structure and semiconductor structure

• Main Authors: CHEN YANG, CHENG MINGXIA
• Format: Patent
• Language: Chinese; English
• Published: 08.07.2022
• Subjects: ELECTRICITY

The invention provides a manufacturing method of a semiconductor structure and the semiconductor structure, and relates to the technical field of semiconductors, and the manufacturing method of the semiconductor structure comprises the steps: providing a substrate, an initial conductive layer, an initial first dielectric layer, an initial first mask layer, an initial second dielectric layer, an initial second mask layer and a photoresist layer with patterns are sequentially formed on the substrate in a stacked mode; the photoresist layer is used as a mask plate to etch part of the initial second mask layer, part of the initial second dielectric layer and part of the initial first mask layer to form a second dielectric layer with a trapezoidal structure, and the trapezoidal structure is of a big-end-down structure, so that the structural strength of the second dielectric layer can be improved, and the performance of the second dielectric layer is improved. The second dielectric layer is prevented from inclinin