Method and system for growing ultra-wide bandgap semiconductor material by ultraviolet-assisted MOCVD (Metal Organic Chemical Vapor Deposition)
The invention discloses a method and a system for growing an ultra-wide bandgap semiconductor material through ultraviolet-assisted MOCVD (Metal Organic Chemical Vapor Deposition). The method comprises the steps that when the ultra-wide bandgap semiconductor material grows through the MOCVD technolo...
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Main Authors | , |
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Format | Patent |
Language | Chinese English |
Published |
21.06.2022
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Subjects | |
Online Access | Get full text |
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Summary: | The invention discloses a method and a system for growing an ultra-wide bandgap semiconductor material through ultraviolet-assisted MOCVD (Metal Organic Chemical Vapor Deposition). The method comprises the steps that when the ultra-wide bandgap semiconductor material grows through the MOCVD technology, pulse ultraviolet light evenly irradiates the surface of a substrate or the ultra-wide bandgap semiconductor material growing on the surface of the substrate, the energy of the ultraviolet light is larger than the bandgap width of the ultra-wide bandgap semiconductor material, and the illumination intensity of the ultraviolet light is gt; and 0.2 W/cm < 2 >. By utilizing the technical scheme of the invention, the epitaxial growth process difficulty and energy consumption of the ultra-wide bandgap semiconductor material can be reduced, and the crystal quality, the stress level, the optical transmission performance and the electrical breakdown characteristic of the ultra-wide bandgap semiconductor material can be |
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Bibliography: | Application Number: CN202011514514 |