Method and system for growing ultra-wide bandgap semiconductor material by ultraviolet-assisted MOCVD (Metal Organic Chemical Vapor Deposition)

• Main Authors: YE JICHUN, GUO WEI
• Format: Patent
• Language: Chinese; English
• Published: 21.06.2022
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The invention discloses a method and a system for growing an ultra-wide bandgap semiconductor material through ultraviolet-assisted MOCVD (Metal Organic Chemical Vapor Deposition). The method comprises the steps that when the ultra-wide bandgap semiconductor material grows through the MOCVD technology, pulse ultraviolet light evenly irradiates the surface of a substrate or the ultra-wide bandgap semiconductor material growing on the surface of the substrate, the energy of the ultraviolet light is larger than the bandgap width of the ultra-wide bandgap semiconductor material, and the illumination intensity of the ultraviolet light is gt; and 0.2 W/cm < 2 >. By utilizing the technical scheme of the invention, the epitaxial growth process difficulty and energy consumption of the ultra-wide bandgap semiconductor material can be reduced, and the crystal quality, the stress level, the optical transmission performance and the electrical breakdown characteristic of the ultra-wide bandgap semiconductor material can be