Laser crystallization device and thin film transistor substrate

• Main Authors: OKUMURA HIROSHI, JOUNG JAE WOO, KANG MIN-KYUNG, SO BYUNG SOO
• Format: Patent
• Language: Chinese; English
• Published: 03.06.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a laser crystallization apparatus and a thin film transistor substrate. The laser crystallization device comprises a light source which emits first incident light and second incident light; a polarization angle adjustment unit that adjusts the polarization angle of the first incident light and the polarization angle of the second incident light and emits first emergent light and second emergent light; and a stage supporting the substrate irradiated by the laser beam including the first emission light and the second emission light, in which a polarization angle of the first emission light and a polarization angle of the second emission light may be symmetrical. 公开一种激光晶化装置及薄膜晶体管基板。激光晶化装置包括：光源，发出第一入射光及第二入射光；偏振角度调节部，调节第一入射光的偏振角度及第二入射光的偏振角度而发出第一出射光及第二出射光；以及平台，支撑被包括第一出射光及第二出射光的激光束照射的基板，其中，第一出射光的偏振角度与第二出射光的偏振角度可以对称。