SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

• Main Authors: LIM JU-YOUNG, KIM JONG-SOO, CHO WON-SEOK, MOON JE SUK, SHIM SUN-IL, LEE HAE-MIN
• Format: Patent
• Language: Chinese; English
• Published: 15.03.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a semiconductor device and an electronic system including the same. The semiconductor device includes: a gate electrode structure on a substrate; a channel extending through the gate electrode structure; and an etch stop layer on a sidewall of the gate electrode structure. The gate electrode structure includes gate electrodes spaced apart from each other in a first direction and stacked in a stepped shape. The channel includes a first portion and a second portion in contact with the first portion. The width of the lower surface of the second portion is smaller than that of the upper surface of the first portion. The etch stop layer contacts at least one of the gate electrodes and overlaps an upper portion of the first portion of the channel in a horizontal direction. At least one gate electrode contacting the etch stop layer is a dummy gate electrode including an insulating material. 本申请提供了一种半导体器件和包括半导体器件的电子系统。所述半导体器件，包括：衬底上的栅电极结构；沟道，延伸穿过栅电极结构；以及蚀刻停止层，在栅电极结构的侧壁上。栅电极结构包括在第一方向上彼此间隔开并且以阶梯形