Semiconductor memory device

• Main Authors: KANG BYUNG-MU, KANG TAE-GYU, SHIN JUNGAN, SHIN SEOK-HO
• Format: Patent
• Language: Chinese; English
• Published: 11.03.2022
• Subjects: ELECTRICITY

A semiconductor memory device includes: a substrate; a semiconductor pattern extending in a first horizontal direction on the substrate; a bit line extending on the substrate in a second horizontal direction perpendicular to the first horizontal direction, the bit line being located at a first end of the semiconductor pattern; a word line extending in a vertical direction on the substrate at a side portion of the semiconductor pattern; a capacitor structure located at a second end of the semiconductor pattern opposite to the first end in the first horizontal direction, the capacitor structure including a lower electrode connected to the semiconductor pattern, an upper electrode spaced apart from the lower electrode, and a capacitor dielectric layer located between the lower electrode and the upper electrode; and a capacitor contact layer between the second end of the semiconductor pattern and the lower electrode, and including a pair of convex surfaces in contact with the semiconductor pattern. 一种半导体存储器件包括：衬底