Semiconductor memory device
A semiconductor memory device includes: a substrate; a semiconductor pattern extending in a first horizontal direction on the substrate; a bit line extending on the substrate in a second horizontal direction perpendicular to the first horizontal direction, the bit line being located at a first end o...
Saved in:
Main Authors | , , , |
---|---|
Format | Patent |
Language | Chinese English |
Published |
11.03.2022
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Abstract | A semiconductor memory device includes: a substrate; a semiconductor pattern extending in a first horizontal direction on the substrate; a bit line extending on the substrate in a second horizontal direction perpendicular to the first horizontal direction, the bit line being located at a first end of the semiconductor pattern; a word line extending in a vertical direction on the substrate at a side portion of the semiconductor pattern; a capacitor structure located at a second end of the semiconductor pattern opposite to the first end in the first horizontal direction, the capacitor structure including a lower electrode connected to the semiconductor pattern, an upper electrode spaced apart from the lower electrode, and a capacitor dielectric layer located between the lower electrode and the upper electrode; and a capacitor contact layer between the second end of the semiconductor pattern and the lower electrode, and including a pair of convex surfaces in contact with the semiconductor pattern.
一种半导体存储器件包括:衬底 |
---|---|
AbstractList | A semiconductor memory device includes: a substrate; a semiconductor pattern extending in a first horizontal direction on the substrate; a bit line extending on the substrate in a second horizontal direction perpendicular to the first horizontal direction, the bit line being located at a first end of the semiconductor pattern; a word line extending in a vertical direction on the substrate at a side portion of the semiconductor pattern; a capacitor structure located at a second end of the semiconductor pattern opposite to the first end in the first horizontal direction, the capacitor structure including a lower electrode connected to the semiconductor pattern, an upper electrode spaced apart from the lower electrode, and a capacitor dielectric layer located between the lower electrode and the upper electrode; and a capacitor contact layer between the second end of the semiconductor pattern and the lower electrode, and including a pair of convex surfaces in contact with the semiconductor pattern.
一种半导体存储器件包括:衬底 |
Author | KANG BYUNG-MU SHIN JUNGAN SHIN SEOK-HO KANG TAE-GYU |
Author_xml | – fullname: KANG BYUNG-MU – fullname: KANG TAE-GYU – fullname: SHIN JUNGAN – fullname: SHIN SEOK-HO |
BookMark | eNrjYmDJy89L5WSQDk7NzUzOz0spTS7JL1LITc3NL6pUSEkty0xO5WFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8c5-hoYmhuaGpkYGjsbEqAEAZFklVA |
ContentType | Patent |
DBID | EVB |
DatabaseName | esp@cenet |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Medicine Chemistry Sciences |
DocumentTitleAlternate | 半导体存储器件 |
ExternalDocumentID | CN114171520A |
GroupedDBID | EVB |
ID | FETCH-epo_espacenet_CN114171520A3 |
IEDL.DBID | EVB |
IngestDate | Fri Aug 23 06:57:54 EDT 2024 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | Chinese English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-epo_espacenet_CN114171520A3 |
Notes | Application Number: CN202110938165 |
OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220311&DB=EPODOC&CC=CN&NR=114171520A |
ParticipantIDs | epo_espacenet_CN114171520A |
PublicationCentury | 2000 |
PublicationDate | 20220311 |
PublicationDateYYYYMMDD | 2022-03-11 |
PublicationDate_xml | – month: 03 year: 2022 text: 20220311 day: 11 |
PublicationDecade | 2020 |
PublicationYear | 2022 |
RelatedCompanies | SAMSUNG ELECTRONIC JOINT-BASED CONSULTATION |
RelatedCompanies_xml | – name: SAMSUNG ELECTRONIC JOINT-BASED CONSULTATION |
Score | 3.5175867 |
Snippet | A semiconductor memory device includes: a substrate; a semiconductor pattern extending in a first horizontal direction on the substrate; a bit line extending... |
SourceID | epo |
SourceType | Open Access Repository |
SubjectTerms | ELECTRICITY |
Title | Semiconductor memory device |
URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220311&DB=EPODOC&locale=&CC=CN&NR=114171520A |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQMU9KS0w2NEvTNTROTdU1STFO1E00SDPUtbBMM09OBtYJKeCJdl8_M49QE68I0wgmhizYXhjwOaHl4MMRgTkqGZjfS8DldQFiEMsFvLayWD8pEyiUb-8WYuuiBu0dGxkB06ihmouTrWuAv4u_s5qzs62zn5pfkC2w2W9oDqyrDByZGVhBzWjQOfuuYU6gXSkFyFWKmyADWwDQtLwSIQamqgxhBk5n2M1rwgwcvtAJbyATmveKRRikg0Hr2PPzQAe05hcp5IKWyFYqpKSCsroog6Kba4izhy7Qlni4l-Kd_RAOMhZjYAF29VMlGBSAzaGkFIMkU-M0YDvGxMLUIjHRNDktDdgsS0oxTTY0lGSQwm2OFD5JaQYuUPCAVk8ZGsowsJQUlabKAqvTkiQ5cDgAAMJ7eMI |
link.rule.ids | 230,309,786,891,25594,76903 |
linkProvider | European Patent Office |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQMU9KS0w2NEvTNTROTdU1STFO1E00SDPUtbBMM09OBtYJKeCJdl8_M49QE68I0wgmhizYXhjwOaHl4MMRgTkqGZjfS8DldQFiEMsFvLayWD8pEyiUb-8WYuuiBu0dGxkB06ihmouTrWuAv4u_s5qzs62zn5pfkC2w2W9oDqyrDByZGVjNgV1CcFcpzAm0K6UAuUpxE2RgCwCallcixMBUlSHMwOkMu3lNmIHDFzrhDWRC816xCIN0MGgde34e6IDW_CKFXNAS2UqFlFRQVhdlUHRzDXH20AXaEg_3UryzH8JBxmIMLMCufqoEgwKwOZSUYpBkapwGbMeYWJhaJCaaJqelAZtlSSmmyYaGkgxSuM2Rwicpz8DpEeLrE-_j6ectzcAFCirQSipDQxkGlpKi0lRZYNVakiQHDhMAjQV7rA |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Semiconductor+memory+device&rft.inventor=KANG+BYUNG-MU&rft.inventor=KANG+TAE-GYU&rft.inventor=SHIN+JUNGAN&rft.inventor=SHIN+SEOK-HO&rft.date=2022-03-11&rft.externalDBID=A&rft.externalDocID=CN114171520A |