Semiconductor memory device
A semiconductor memory device includes: a substrate; a semiconductor pattern extending in a first horizontal direction on the substrate; a bit line extending on the substrate in a second horizontal direction perpendicular to the first horizontal direction, the bit line being located at a first end o...
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Main Authors | , , , |
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Format | Patent |
Language | Chinese English |
Published |
11.03.2022
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Subjects | |
Online Access | Get full text |
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Summary: | A semiconductor memory device includes: a substrate; a semiconductor pattern extending in a first horizontal direction on the substrate; a bit line extending on the substrate in a second horizontal direction perpendicular to the first horizontal direction, the bit line being located at a first end of the semiconductor pattern; a word line extending in a vertical direction on the substrate at a side portion of the semiconductor pattern; a capacitor structure located at a second end of the semiconductor pattern opposite to the first end in the first horizontal direction, the capacitor structure including a lower electrode connected to the semiconductor pattern, an upper electrode spaced apart from the lower electrode, and a capacitor dielectric layer located between the lower electrode and the upper electrode; and a capacitor contact layer between the second end of the semiconductor pattern and the lower electrode, and including a pair of convex surfaces in contact with the semiconductor pattern.
一种半导体存储器件包括:衬底 |
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Bibliography: | Application Number: CN202110938165 |