Redundant drive pulse elimination modulation method for high-frequency SiC MOSFET four-level half-bridge inverter

• Main Authors: XU HAILIANG, ZHANG XINCHENG, ZHAO RENDE, ZHAO TIANRUN, YAN QINGZENG, XING CHENGJIAN, CHEN HAOMING
• Format: Patent
• Language: Chinese; English
• Published: 14.01.2022
• Subjects: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS; CONTROL OR REGULATION THEREOF; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER; ELECTRICITY; GENERATION

The invention discloses a redundant drive pulse elimination modulation method for a high-frequency SiC MOSFET four-level half-bridge inverter. The method comprises the steps of: filtering out high-frequency current harmonics of an output current of a main circuit of the high-frequency SiC MOSFET four-level half-bridge inverter through a second-order Butterworth low-pass filter, and acquiring a filtered current; inputting the filtered current and modulating waves into a domain division module to obtain an interval number; and inputting upper carrier waves, middle carrier waves, lower carrier waves and the modulating waves into an original driving pulse generating module to obtain six paths of original driving signals, and inputting the six paths of original driving signals into a redundant pulse elimination module to obtain six paths of driving signals with redundant pulses eliminated. According to the redundant drive pulse elimination modulation method for the high-frequency SiC MOSFET four-level half-bridge