Method of making integrated thermoelectric converter and integrated thermoelectric converter obtained thereby

Embodiments of the present disclosure relate to a method of making an integrated thermoelectric converter and an integrated thermoelectric converter obtained thereby. The method includes providing a silicon-based material layer having a first surface and a second surface opposite the first surface a...

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Main Authors LUCA SEGHIZZI, VILLA FLAVIO FRANCESCO, SCOLARI MARTINA, ZANOTTI LUCA, FERRARI PAOLO, ZULLINO LUCIA, MURARI BRUNO, NOMELLINI ANDREA
Format Patent
LanguageChinese
English
Published 07.12.2021
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Abstract Embodiments of the present disclosure relate to a method of making an integrated thermoelectric converter and an integrated thermoelectric converter obtained thereby. The method includes providing a silicon-based material layer having a first surface and a second surface opposite the first surface and spaced apart from the first surface by a thickness of the silicon-based material layer; forming a plurality of first thermoelectric active elements of a first thermoelectric semiconductor material having a first Seebeck coefficient, and forming a plurality of second thermoelectric active elements of a second thermoelectric semiconductor material having a second Seebeck coefficient, wherein the first and second thermoelectric active elements are formed to extend from the first surface through the thickness of the silicon-based material layer to the second surface; forming conductive interconnects corresponding to the first and second surfaces of the silicon-based material layer, and forming input and output elect
AbstractList Embodiments of the present disclosure relate to a method of making an integrated thermoelectric converter and an integrated thermoelectric converter obtained thereby. The method includes providing a silicon-based material layer having a first surface and a second surface opposite the first surface and spaced apart from the first surface by a thickness of the silicon-based material layer; forming a plurality of first thermoelectric active elements of a first thermoelectric semiconductor material having a first Seebeck coefficient, and forming a plurality of second thermoelectric active elements of a second thermoelectric semiconductor material having a second Seebeck coefficient, wherein the first and second thermoelectric active elements are formed to extend from the first surface through the thickness of the silicon-based material layer to the second surface; forming conductive interconnects corresponding to the first and second surfaces of the silicon-based material layer, and forming input and output elect
Author SCOLARI MARTINA
NOMELLINI ANDREA
VILLA FLAVIO FRANCESCO
MURARI BRUNO
LUCA SEGHIZZI
ZANOTTI LUCA
ZULLINO LUCIA
FERRARI PAOLO
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– fullname: ZULLINO LUCIA
– fullname: MURARI BRUNO
– fullname: NOMELLINI ANDREA
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Snippet Embodiments of the present disclosure relate to a method of making an integrated thermoelectric converter and an integrated thermoelectric converter obtained...
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Title Method of making integrated thermoelectric converter and integrated thermoelectric converter obtained thereby
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