Method of making integrated thermoelectric converter and integrated thermoelectric converter obtained thereby
Embodiments of the present disclosure relate to a method of making an integrated thermoelectric converter and an integrated thermoelectric converter obtained thereby. The method includes providing a silicon-based material layer having a first surface and a second surface opposite the first surface a...
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Main Authors | , , , , , , , |
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Format | Patent |
Language | Chinese English |
Published |
07.12.2021
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Subjects | |
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Abstract | Embodiments of the present disclosure relate to a method of making an integrated thermoelectric converter and an integrated thermoelectric converter obtained thereby. The method includes providing a silicon-based material layer having a first surface and a second surface opposite the first surface and spaced apart from the first surface by a thickness of the silicon-based material layer; forming a plurality of first thermoelectric active elements of a first thermoelectric semiconductor material having a first Seebeck coefficient, and forming a plurality of second thermoelectric active elements of a second thermoelectric semiconductor material having a second Seebeck coefficient, wherein the first and second thermoelectric active elements are formed to extend from the first surface through the thickness of the silicon-based material layer to the second surface; forming conductive interconnects corresponding to the first and second surfaces of the silicon-based material layer, and forming input and output elect |
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AbstractList | Embodiments of the present disclosure relate to a method of making an integrated thermoelectric converter and an integrated thermoelectric converter obtained thereby. The method includes providing a silicon-based material layer having a first surface and a second surface opposite the first surface and spaced apart from the first surface by a thickness of the silicon-based material layer; forming a plurality of first thermoelectric active elements of a first thermoelectric semiconductor material having a first Seebeck coefficient, and forming a plurality of second thermoelectric active elements of a second thermoelectric semiconductor material having a second Seebeck coefficient, wherein the first and second thermoelectric active elements are formed to extend from the first surface through the thickness of the silicon-based material layer to the second surface; forming conductive interconnects corresponding to the first and second surfaces of the silicon-based material layer, and forming input and output elect |
Author | SCOLARI MARTINA NOMELLINI ANDREA VILLA FLAVIO FRANCESCO MURARI BRUNO LUCA SEGHIZZI ZANOTTI LUCA ZULLINO LUCIA FERRARI PAOLO |
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DocumentTitleAlternate | 制作集成热电转换器的方法和由此获得的集成热电转换器 |
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Snippet | Embodiments of the present disclosure relate to a method of making an integrated thermoelectric converter and an integrated thermoelectric converter obtained... |
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Title | Method of making integrated thermoelectric converter and integrated thermoelectric converter obtained thereby |
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