CdS branch structure using Sn nanowire as template to guide growth and catalytic growth method and application of CdS branch structure

• Main Authors: HAN XIAONING, ZOU BINGSUO, WEN PEITING, ZHANG LI, LI JINGBO
• Format: Patent
• Language: Chinese; English
• Published: 03.12.2021
• Subjects: CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INORGANIC CHEMISTRY; METALLURGY; OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS; OPTICS; PERFORMING OPERATIONS; PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL; PHYSICS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; THEIR RELEVANT APPARATUS; TRANSPORTING

The invention belongs to the technical field of preparation of semiconductor photoelectric nanomaterials, and discloses a catalytic growth method for guiding growth of a CdS branch structure by using a Sn nanowire as a template. The method comprises the following steps: grinding and uniformly mixing CdS solid powder and SnO2 powder to obtain precursor mixed powder; and pouring the precursor mixed powder into a porcelain boat, placing the porcelain boat at the position of a central heating temperature zone of a tubular furnace, placing a pretreated mica sheet substrate on the porcelain boat at a downstream deposition zone 11-12cm away from the central heating temperature zone, placing the porcelain boats in a quartz tube, introducing a mixed gas of hydrogen and argon, emptying air in the quartz tube, conducting reacting at 850-1150 DEG C, keeping the gas flow rate at 20-40 sccm in the heating process, naturally reducing the temperature to room temperature after the reaction is finished, and obtaining the Sn-do