CdS branch structure using Sn nanowire as template to guide growth and catalytic growth method and application of CdS branch structure
The invention belongs to the technical field of preparation of semiconductor photoelectric nanomaterials, and discloses a catalytic growth method for guiding growth of a CdS branch structure by using a Sn nanowire as a template. The method comprises the following steps: grinding and uniformly mixing...
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Main Authors | , , , , |
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Format | Patent |
Language | Chinese English |
Published |
03.12.2021
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Subjects | |
Online Access | Get full text |
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Summary: | The invention belongs to the technical field of preparation of semiconductor photoelectric nanomaterials, and discloses a catalytic growth method for guiding growth of a CdS branch structure by using a Sn nanowire as a template. The method comprises the following steps: grinding and uniformly mixing CdS solid powder and SnO2 powder to obtain precursor mixed powder; and pouring the precursor mixed powder into a porcelain boat, placing the porcelain boat at the position of a central heating temperature zone of a tubular furnace, placing a pretreated mica sheet substrate on the porcelain boat at a downstream deposition zone 11-12cm away from the central heating temperature zone, placing the porcelain boats in a quartz tube, introducing a mixed gas of hydrogen and argon, emptying air in the quartz tube, conducting reacting at 850-1150 DEG C, keeping the gas flow rate at 20-40 sccm in the heating process, naturally reducing the temperature to room temperature after the reaction is finished, and obtaining the Sn-do |
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Bibliography: | Application Number: CN202110871604 |