Semiconductor structure and forming method thereof

• Main Authors: CHEN DIANHAO, SHEN XIANGGU, WANG LIANGWEI, HUANG ZHIFAN, CHEN YANMING
• Format: Patent
• Language: Chinese; English
• Published: 30.11.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The semiconductor structure includes a third metal layer located directly over a second metal layer located over the first metal layer. The second metal layer includes magnetic tunnel junction (MTJ) devices in a memory region and a first conductive feature in a logic region. Each MTJ device includes a bottom electrode and an MTJ stack over the bottom electrode. The third metal layer includes a first via electrically connected to a first conductive part, and a trench via over and electrically connected to an MTJ stack of the MTJ device. The trench via occupies a space extending continuously laterally from a first one of the MTJ devices to a last one of the MTJ devices. The first via is as thin as or thinner than the trench via. The third metal layer further includes a second conductive part and a third conductive part electrically connected to the first via and the trench via, respectively. The embodiment of the invention also relates to a method for forming the semiconductor structure. 半导体结构包括位于第二金属层正上方的第三金属层