Semiconductor device
The embodiment of the invention provides a semiconductor device. The semiconductor device includes a contact structure, a first passivation layer, a bottom conductor plate layer, a second dielectric layer, an intermediate conductor plate layer, a third dielectric layer, a top conductor plate layer,...
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Main Authors | , |
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Format | Patent |
Language | Chinese English |
Published |
28.09.2021
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Subjects | |
Online Access | Get full text |
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Abstract | The embodiment of the invention provides a semiconductor device. The semiconductor device includes a contact structure, a first passivation layer, a bottom conductor plate layer, a second dielectric layer, an intermediate conductor plate layer, a third dielectric layer, a top conductor plate layer, and a second passivation layer. The contact structure is located in the first dielectric layer; the first passivation layer is located on the contact structure; the bottom conductor plate layer is located on the first passivation layer, and the bottom conductor plate layer comprises a plurality of first sub-layers; the second dielectric layer is located on the bottom conductor plate layer; the middle conductor plate layer is located on the second dielectric layer, and the middle conductor plate layer comprises a plurality of second sub-layers; the third dielectric layer is located on the middle conductor plate layer; the top conductor plate layer is located on the third dielectric layer, and the top conductor plate |
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AbstractList | The embodiment of the invention provides a semiconductor device. The semiconductor device includes a contact structure, a first passivation layer, a bottom conductor plate layer, a second dielectric layer, an intermediate conductor plate layer, a third dielectric layer, a top conductor plate layer, and a second passivation layer. The contact structure is located in the first dielectric layer; the first passivation layer is located on the contact structure; the bottom conductor plate layer is located on the first passivation layer, and the bottom conductor plate layer comprises a plurality of first sub-layers; the second dielectric layer is located on the bottom conductor plate layer; the middle conductor plate layer is located on the second dielectric layer, and the middle conductor plate layer comprises a plurality of second sub-layers; the third dielectric layer is located on the middle conductor plate layer; the top conductor plate layer is located on the third dielectric layer, and the top conductor plate |
Author | SHEN XIANGGU CHEN DIANHAO |
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Notes | Application Number: CN202110284822 |
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RelatedCompanies | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD |
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Snippet | The embodiment of the invention provides a semiconductor device. The semiconductor device includes a contact structure, a first passivation layer, a bottom... |
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SubjectTerms | ELECTRICITY |
Title | Semiconductor device |
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