Semiconductor device

• Main Authors: CHEN DIANHAO, SHEN XIANGGU
• Format: Patent
• Language: Chinese; English
• Published: 28.09.2021
• Subjects: ELECTRICITY

The embodiment of the invention provides a semiconductor device. The semiconductor device includes a contact structure, a first passivation layer, a bottom conductor plate layer, a second dielectric layer, an intermediate conductor plate layer, a third dielectric layer, a top conductor plate layer, and a second passivation layer. The contact structure is located in the first dielectric layer; the first passivation layer is located on the contact structure; the bottom conductor plate layer is located on the first passivation layer, and the bottom conductor plate layer comprises a plurality of first sub-layers; the second dielectric layer is located on the bottom conductor plate layer; the middle conductor plate layer is located on the second dielectric layer, and the middle conductor plate layer comprises a plurality of second sub-layers; the third dielectric layer is located on the middle conductor plate layer; the top conductor plate layer is located on the third dielectric layer, and the top conductor plate