MEMORY DEVICE AND OPERATING METHOD THEREOF

• Main Authors: CHI YUDE, GUO ZHENGXIONG, CHEN ZHONGJIE
• Format: Patent
• Language: Chinese; English
• Published: 07.09.2021
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

A memory device includes a column of at least three memory cells and a source line coupled to a source terminal of each memory cell. The source line driver is coupled to the source line, a voltage terminal, and a program voltage source, and is switchable among a program operation, an erase operation...