MEMORY DEVICE AND OPERATING METHOD THEREOF
A memory device includes a column of at least three memory cells and a source line coupled to a source terminal of each memory cell. The source line driver is coupled to the source line, a voltage terminal, and a program voltage source, and is switchable among a program operation, an erase operation...
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Main Authors | , , |
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Format | Patent |
Language | Chinese English |
Published |
07.09.2021
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Subjects | |
Online Access | Get full text |
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