MEMORY DEVICE AND OPERATING METHOD THEREOF

A memory device includes a column of at least three memory cells and a source line coupled to a source terminal of each memory cell. The source line driver is coupled to the source line, a voltage terminal, and a program voltage source, and is switchable among a program operation, an erase operation...

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Bibliographic Details
Main Authors CHI YUDE, GUO ZHENGXIONG, CHEN ZHONGJIE
Format Patent
LanguageChinese
English
Published 07.09.2021
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
Online AccessGet full text

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Summary:A memory device includes a column of at least three memory cells and a source line coupled to a source terminal of each memory cell. The source line driver is coupled to the source line, a voltage terminal, and a program voltage source, and is switchable among a program operation, an erase operation, and a read operation. The embodiment of the invention also relates to a method of operating the memory device. 一种存储器件，包括至少三个存储器单元的列和耦合到每个存储器单元的源极端子的源极线。源极线驱动器耦合到源极线、电压端子和编程电压源，并且可在编程操作、擦除操作和读取操作之间切换。本发明的实施例还涉及操作存储器件的方法。
Bibliography:Application Number: CN202110230606