Low-dielectric-constant polyhedral oligomeric silsesquioxane/epoxy resin nano composite material and preparation method thereof

• Main Authors: CUI XIN, ZHANG TIANYAN, CHE JUNBO, HU JINJIN, WEI HUAIXIAO, HUAI KAI, WU WEIFEI, ZHANG JIANMING, CHEN YUWEI, HU ZHENDONG, WANG QUAN, ZHANG BAILANG
• Format: Patent
• Language: Chinese; English
• Published: 03.08.2021
• Subjects: CHEMISTRY; COMPOSITIONS BASED THEREON; MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP

The invention relates to the technical field of integrated circuits, in particular to a low-dielectric-constant polyhedral oligomeric silsesquioxane/epoxy resin nano composite material and a preparation method thereof. The low-dielectric-constant polyhedral oligomeric silsesquioxane/epoxy resin nano composite material is prepared from modified epoxy resin, polyhedral oligomeric silsesquioxane and a photoinitiator, the modified epoxy resin is put into use after ring opening modification, double bonds are introduced to an epoxy resin chain, the double bonds are high in activity, free polymerization can occur, the curing speed is high, the curing temperature is low, and curing forming can be conducted at the room temperature in a light curing mode; therefore, the polyhedral oligomeric silsesquioxane/epoxy resin nano composite material prepared by the method is more suitable for being used as a bonding and packaging material of a chip and a circuit board. 本发明涉及集成电路技术领域，具体涉及低介电常数的笼型聚倍半硅氧烷/环氧树脂纳米复合材料及其制备方法。本发明所述的低介