SEMICONDUCTOR DEVICE

• Main Authors: HAN JEE-HOON, KANG SEO-GOO, SON YOUNG-HWAN, RYU HYO-JOON, KANAMORI KOJI, MOON JE-SUK, JUN JUNG-HOON
• Format: Patent
• Language: Chinese; English
• Published: 14.05.2021
• Subjects: ELECTRICITY

A semiconductor device includes gate layers stacked on a substrate, a channel layer extending through the gate layers, a string selecting gate layer disposed on the channel layer and a string selecting channel layer extending through the string selecting gate layer to contact the channel layer. The string selecting channel layer includes a first portion below the string selecting gate layer including a first protruding region, a second portion extending through the string selecting gate layer, and a third portion above the string selecting gate layer including a second protruding region. 一种半导体器件包括：堆叠在衬底上的栅极层、延伸穿过栅极层的沟道层、设置在沟道层上的串选择栅极层、以及延伸穿过串选择栅极层以接触沟道层的串选择沟道层。串选择沟道层包括在串选择栅极层下方且包含第一突出区域的第一部分、延伸穿过串选择栅极层的第二部分、以及在串选择栅极层上方且包含第二突出区域的第三部分。