Semiconductor structure and manufacturing method thereof

• Main Authors: CHEN DIANHAO, SHEN XIANGGU
• Format: Patent
• Language: Chinese; English
• Published: 30.03.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor structure includes a first passivation layer disposed over a metal line, a copper-containing RDL disposed over the first passivation layer, where the copper-containing RDL is electrically coupled to the metal line and where a portion of the copper-containing RDL in contact with a top surface of the first passivation layer forms an acute angle, and a second passivation layer disposed over the copper-containing RDL, where an interface between the second passivation layer and a top surface of the copper-containing RDL is curved. The semiconductor structure may further include a polymeric layer disposed over the second passivation layer, where a portion of the polymeric layer extends to contact the copper-containing RDL, a bump electrically coupled to the copper-containing RDL,and a solder layer disposed over the bump. The embodiment of the invention also relates to a method for manufacturing the semiconductor structure. 半导体结构包括设置在金属线上方的第一钝化层，设置在第一钝化层上方的含铜RDL，其中含铜RDL电耦接至金属线，并且含铜RDL的与第一钝化层的上表面接触的部分